Contact
Send Message2SJ380-F
100V|12A (Ta)|35W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET P-CH 100V 12A TO220NIS
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- TO-220NIS
- Packaging
- —
- Weight
- —
Total Inventory
367pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2SJ380-F from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V | |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 35W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220NIS | |
| Package / Case | TO-220-3 Full Pack |
Recommended Products
RES 133K OHM 1/8W .1% AXIAL
FIXED IND 6.8UH 5.8A 20 MOHM SMD
MEMS OSC XO 156.253906MHZ LVCMOS
MEMS OSC PROG VCXO LVCMOS 1.8V
SWITCH SNAP ACT SPST-NC 11A 277V
IC DIG MICROMIRROR DEVICE
CONN RCPT LOPRO DL 100PS 1MM SMD
CONN PLUG FMALE 18POS GOLD CRIMP
DUST CAP RCPT SHELL SIZE 16
CONN EDGE DUAL FMALE 48POS 0.156
Datasheet & Documents
2sj380-f.pdf
PDF Document · 6 pages
