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2SJ304-F

60V|14A (Ta)|40W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET P-CH 60V 14A TO220NIS

Specifications

Brand
Toshiba Semiconductor and Storage
Package
TO-220NIS
Packaging
—
Weight
—

Total Inventory

347pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2SJ304-F from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
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Technical Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs120mOhm @ 7A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 10V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220NIS
Package / CaseTO-220-3 Full Pack

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Datasheet & Documents

2sj304-f.pdf

PDF Document · 6 pages

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