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BOM

2SC5201-T6F-J

600V|50mA|900mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS NPN 50MA 600V TO226-3

Specifications

Brand
Toshiba Semiconductor and Storage
Package
TO-226-3, TO-92-3 Long Body
Packaging
—
Weight
—

Total Inventory

122pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2SC5201-T6F-J from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)600V
Vce Saturation (Max) @ Ib, Ic1V @ 500mA, 20mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 20mA, 5V
Power - Max900mW
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92MOD

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Datasheet & Documents

2sc5201-t6muraf-j.pdf

PDF Document · 5 pages

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Datasheet Preview

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