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120V|100mA|150mW
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TRANS NPN 120V 0.1A S-MINI
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- TO-236-3, SC-59, SOT-23-3
- Packaging
- —
- Weight
- —
Total Inventory
353pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2SC3324GRTE85LF from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 120V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V | |
| Power - Max | 150mW | |
| Frequency - Transition | 100MHz | |
| Operating Temperature | 125°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | TO-236 |
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