Heisener Electronics
BOM

2SC2229-Y-MIT-F-M

150V|50mA|800mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS NPN 50MA 150V TO226-3

Specifications

Brand
Toshiba Semiconductor and Storage
Package
TO-226-3, TO-92-3 Long Body
Packaging
—
Weight
—

Total Inventory

107pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2SC2229-Y-MIT-F-M from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)150V
Vce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 5V
Power - Max800mW
Frequency - Transition120MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92MOD

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Datasheet & Documents

2sc2229-y-f-j.pdf

PDF Document · 5 pages

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