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100V|4A|2W
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TRANS PNP 4A 100V TO220-3
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- TO-220-3 Full Pack
- Packaging
- —
- Weight
- —
Total Inventory
369pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2SB1481-TOJS-Q-M from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | PNP | |
| Current - Collector (Ic) (Max) | 4A | |
| Voltage - Collector Emitter Breakdown (Max) | 100V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 6mA, 3A | |
| Current - Collector Cutoff (Max) | 2µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 3A, 2V | |
| Power - Max | 2W | |
| Frequency - Transition | - | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Supplier Device Package | TO-220NIS |
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Datasheet & Documents
2sb1481-tojs-q-m.pdf
PDF Document · 4 pages
