Heisener Electronics
BOM

2SA1930-Q-M

180V|2A|2W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS PNP 180V 2A TO220NIS

Specifications

Brand
Toshiba Semiconductor and Storage
Package
TO-220-3 Full Pack
Packaging
—
Weight
—

Total Inventory

198pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2SA1930-Q-M from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)180V
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Power - Max2W
Frequency - Transition200MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS

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Datasheet & Documents

2sa1930-q-j.pdf

PDF Document · 5 pages

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Datasheet Preview

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