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50V|2A|900mW
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TRANS PNP 2A 50V TO226-3
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- TO-226-3, TO-92-3 Long Body
- Packaging
- —
- Weight
- —
Total Inventory
172pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2SA1680-F-J from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | PNP | |
| Current - Collector (Ic) (Max) | 2A | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A | |
| Current - Collector Cutoff (Max) | 1µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 2V | |
| Power - Max | 900mW | |
| Frequency - Transition | 100MHz | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 Long Body | |
| Supplier Device Package | TO-92MOD |
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Datasheet & Documents
2sa1680-t6scmdf-j.pdf
PDF Document · 4 pages
