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650V|8A (Tc) (158°C)|200W (Tc)
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TRANS SJT 650V 8A TO276
Specifications
- Brand
- GeneSiC Semiconductor
- Package
- TO-276
- Packaging
- —
- Weight
- —
Total Inventory
371pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2N7638-GA from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | GeneSiC Semiconductor | |
| Series | - | |
| FET Type | - | |
| Technology | SiC (Silicon Carbide Junction Transistor) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) (158°C) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 8A | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 35V | |
| FET Feature | - | |
| Power Dissipation (Max) | 200W (Tc) | |
| Operating Temperature | -55°C ~ 225°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-276 | |
| Package / Case | TO-276AA |
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Datasheet & Documents
2n7638-ga.pdf
PDF Document · 6 pages
