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650V|4A (Tc) (165°C)|47W (Tc)
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TRANS SJT 650V 4A TO-257
Specifications
- Brand
- GeneSiC Semiconductor
- Package
- TO-257
- Packaging
- —
- Weight
- —
Total Inventory
251pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2N7635-GA from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | GeneSiC Semiconductor | |
| Series | - | |
| FET Type | - | |
| Technology | SiC (Silicon Carbide Junction Transistor) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (165°C) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 415mOhm @ 4A | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 35V | |
| FET Feature | - | |
| Power Dissipation (Max) | 47W (Tc) | |
| Operating Temperature | -55°C ~ 225°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-257 | |
| Package / Case | TO-257-3 |
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