Heisener Electronics
BOM

2N7002L6327HTSA1

60V|300mA (Ta)|500mW (Ta)
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MOSFET N-CH 60V 300MA SOT-23

Specifications

Brand
Infineon Technologies
Package
PG-SOT23-3
Packaging
—
Weight
—

Total Inventory

423pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N7002L6327HTSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds20pF @ 25V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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