Heisener Electronics
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2N7002KT1G

60V|320mA (Ta)|350mW (Ta)
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MOSFET N-CH 60V 320MA SOT-23

Specifications

Brand
ON Semiconductor
Package
SOT-23-3 (TO-236)
Packaging
—
Weight
—

Total Inventory

100,360pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N7002KT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds24.5pF @ 20V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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Datasheet & Documents

2n7002kt3g.pdf

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