2N7000_1

60V|200mA (Ta)|400mW (Ta)

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MOSFET N-CH 60V 200MA TO-92

100,353pcs

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Purchase Quantity

MOQ: 1 pcs

Product Video

Manufacturer	ON Semiconductor
Series	-
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
FET Feature	-
Power Dissipation (Max)	400mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)