Heisener Electronics
BOM

2N6766T1

200V|30A (Tc)|4W (Ta), 150W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 200V TO-254AA

Specifications

Brand
Microsemi
Package
TO-254AA
Packaging
—
Weight
—

Total Inventory

469pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N6766T1 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs115nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)4W (Ta), 150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-254AA
Package / CaseTO-254-3, TO-254AA (Straight Leads)

Recommended Products

Y0786128R000B9L_1

Y0786128R000B9L_1

RES 128 OHM 0.6W 0.1% RADIAL

SIT9005ACL2H-XXNN

SIT9005ACL2H-XXNN

MEMS OSC PRG SSXO LVCMOS CS 2.5V

C1210C681F4HAC7800

C1210C681F4HAC7800

CAP CER 1210 680PF 16V ULTRA STA

A11215RNZB

A11215RNZB

SWITCH ROTARY 12POS 0.4VA 20V

ISO7331CQDWRQ1

ISO7331CQDWRQ1

DGTL ISO 3KV 3CH GEN PURP 16SOIC

9-1437382-2

9-1437382-2

CONN BARRIER BLOCK COVER 2POS

M80-5420642

M80-5420642

3+3 WAY M HORIZ BM SMT W/3.5MM

349-10-137-00-560000

349-10-137-00-560000

CONN HEADER 37POS SMD SNGL ROW

FN394-2-5-05-11

FN394-2-5-05-11

PWR ENT MOD RCPT IEC320-C14 PNL

MS3101F28-12P

MS3101F28-12P

CONN RCPT 26POS INLINE W/PINS