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90V|860mA (Tc)|725mW (Ta), 6.25W (Tc)
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MOSFET N-CH 90V 0.86A TO-205
Specifications
- Brand
- Vishay Siliconix
- Package
- TO-39
- Packaging
- —
- Weight
- —
Total Inventory
211pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2N6661-2 from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Siliconix | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 90V | |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-39 | |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
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Datasheet & Documents
2n6661jtxv02.pdf
PDF Document · 6 pages
