Heisener Electronics
BOM

2N6660JTXL02

60V|990mA (Tc)|725mW (Ta), 6.25W (Tc)
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MOSFET N-CH 60V 0.99A TO-205

Specifications

Brand
Vishay Siliconix
Package
TO-205AD (TO-39)
Packaging
—
Weight
—

Total Inventory

190pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N6660JTXL02 from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
FET Feature-
Power Dissipation (Max)725mW (Ta), 6.25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-205AD (TO-39)
Package / CaseTO-205AD, TO-39-3 Metal Can

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Datasheet & Documents

2n6660jtxv02.pdf

PDF Document · 6 pages

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