Heisener Electronics
BOM

2N6517G

350V|500mA|625mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS NPN 350V 0.5A TO92

Specifications

Brand
ON Semiconductor
Package
TO-226-3, TO-92-3 (TO-226AA)
Packaging
—
Weight
—

Total Inventory

437pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N6517G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)350V
Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA, 10V
Power - Max625mW
Frequency - Transition200MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3

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Datasheet & Documents

2n6517rlrpg.pdf

PDF Document · 7 pages

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Datasheet Preview

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