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80 V|8 A|75 W
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POWER BJT
Specifications
- Brand
- Microchip Technology
- Package
- TO-213AA, TO-66-2
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2N6301P from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microchip Technology | |
| Series | - | |
| Transistor Type | NPN - Darlington | |
| Current - Collector (Ic) (Max) | 8 A | |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A | |
| Current - Collector Cutoff (Max) | 500µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V | |
| Power - Max | 75 W | |
| Frequency - Transition | - | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-213AA, TO-66-2 | |
| Supplier Device Package | TO-66 (TO-213AA) |
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