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100 V|50 A|262 W
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POWER BJT
Specifications
- Brand
- Microchip Technology
- Package
- TO-211MB, TO-63-4, Stud
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2N6061 from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microchip Technology | |
| Series | - | |
| Transistor Type | PNP | |
| Current - Collector (Ic) (Max) | 50 A | |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | |
| Vce Saturation (Max) @ Ib, Ic | - | |
| Current - Collector Cutoff (Max) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | |
| Power - Max | 262 W | |
| Frequency - Transition | - | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Mounting Type | Stud Mount | |
| Package / Case | TO-211MB, TO-63-4, Stud | |
| Supplier Device Package | TO-63 |
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