Heisener Electronics
BOM

2N5682E4

120 V|1 A|1 W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

POWER BJT

Specifications

Brand
Microchip Technology
Package
TO-205AD, TO-39-3 Metal Can
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N5682E4 from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrochip Technology
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)120 V
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 250mA, 2V
Power - Max1 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39 (TO-205AD)

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