Heisener Electronics
BOM

2N5539

130 V|20 A|175 W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

POWER BJT

Specifications

Brand
Microchip Technology
Package
TO-211MB, TO-63-4, Stud
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N5539 from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrochip Technology
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)130 V
Vce Saturation (Max) @ Ib, Ic800mV @ 1.5mA, 10mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max175 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeStud Mount
Package / CaseTO-211MB, TO-63-4, Stud
Supplier Device PackageTO-63

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