Heisener Electronics
BOM

2N5412

60 V|15 A|100 W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

POWER BJT

Specifications

Brand
Microchip Technology
Package
TO-211MA, TO-210AC, TO-61-4, Stud
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N5412 from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrochip Technology
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)15 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max100 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeStud Mount
Package / CaseTO-211MA, TO-210AC, TO-61-4, Stud
Supplier Device PackageTO-61

Recommended Products

RNC55J2641BSRSL

RNC55J2641BSRSL

RES 2.64K OHM 1/8W .1% AXIAL

H824R9BYA

H824R9BYA

RES 24.9 OHM 1/4W 0.1% AXIAL

MFR50SFRE52-267K

MFR50SFRE52-267K

RES MF 1/2W 1% AXIAL

B43254C5157M000

B43254C5157M000

CAP ALUM 150UF 20% 450V SNAP

24LC04BT-I-ST

24LC04BT-I-ST

IC EEPROM 4K I2C 400KHZ 8TSSOP

2SA1381CSTU_1

2SA1381CSTU_1

TRANS PNP 300V 0.1A TO-126

FQD10N20TF

FQD10N20TF

MOSFET N-CH 200V 7.6A DPAK

DJT10F25-19SB-LC

DJT10F25-19SB-LC

CONN RCPT HSG FMALE 19POS PNL MT

217-0715-200

217-0715-200

ER 06 22 C/N A206

SIGC25T60NCX1SA4

SIGC25T60NCX1SA4

IGBT 3 CHIP 600V WAFER