Heisener Electronics
BOM

2N5306_6B

25V|1.2A|625mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS NPN DARL 25V 1.2A TO-92

Specifications

Brand
ON Semiconductor
Package
TO-226-3, TO-92-3 (TO-226AA)
Packaging
—
Weight
—

Total Inventory

443pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N5306_6B from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)1.2A
Voltage - Collector Emitter Breakdown (Max)25V
Vce Saturation (Max) @ Ib, Ic1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce7000 @ 2mA, 5V
Power - Max625mW
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3

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Datasheet & Documents

2n5306_d74z.pdf

PDF Document · 4 pages

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Datasheet Preview

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