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20V|-|360mW
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Specifications
- Brand
- Microsemi
- Package
- -
- Packaging
- —
- Weight
- —
Total Inventory
242pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2N4449UB from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | Military, MIL-PRF-19500/317 | |
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | - | |
| Voltage - Collector Emitter Breakdown (Max) | 20V | |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA | |
| Current - Collector Cutoff (Max) | 400nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V | |
| Power - Max | 360mW | |
| Frequency - Transition | - | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | - | |
| Supplier Device Package | UB |
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