Heisener Electronics
BOM

2N3765U4

60 V|1.5 A|500 mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

POWER BJT

Specifications

Brand
Microchip Technology
Package
3-SMD, No Lead
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N3765U4 from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrochip Technology
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic900mV @ 100mA, 1A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA, 1V
Power - Max500 mW
Frequency - Transition-
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Supplier Device PackageU4

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