Heisener Electronics
BOM

2N3585P

300 V|2 A|2.5 W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

POWER BJT

Specifications

Brand
Microchip Technology
Package
TO-213AA, TO-66-2
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N3585P from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrochip Technology
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)300 V
Vce Saturation (Max) @ Ib, Ic750mV @ 125mA, 1A
Current - Collector Cutoff (Max)5mA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 100mA, 10V
Power - Max2.5 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-213AA, TO-66-2
Supplier Device PackageTO-66 (TO-213AA)

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