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60 V|200 mA|360 mW
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SMALL-SIGNAL BJT
Specifications
- Brand
- Microchip Technology
- Package
- 3-SMD, No Lead
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2N3250AUB from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Microchip Technology | |
| Series | - | |
| Transistor Type | PNP | |
| Current - Collector (Ic) (Max) | 200 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA | |
| Current - Collector Cutoff (Max) | 20nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 1V | |
| Power - Max | 360 mW | |
| Frequency - Transition | - | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-SMD, No Lead | |
| Supplier Device Package | UB |
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