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60 V|500 mA|1.8 W
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RAD-HARD 60 V, 0.6 A PNP TRANSIS
Specifications
- Brand
- STMicroelectronics
- Package
- 3-SMD, No Lead
- Packaging
- —
- Weight
- —
Total Inventory
300pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2N2907AUB1 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | - | |
| Transistor Type | PNP | |
| Current - Collector (Ic) (Max) | 500 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
| Current - Collector Cutoff (Max) | 50nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | |
| Power - Max | 1.8 W | |
| Frequency - Transition | - | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-SMD, No Lead | |
| Supplier Device Package | UB |
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