Heisener Electronics
BOM

2N2779

250 V|30 A|200 W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

POWER BJT

Specifications

Brand
Microchip Technology
Package
TO-211MB, TO-63-4, Stud
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N2779 from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrochip Technology
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)250 V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max200 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeStud Mount
Package / CaseTO-211MB, TO-63-4, Stud
Supplier Device PackageTO-63

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