Heisener Electronics
BOM

2N2608_1

30V|900µA @ 5V|300mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

IC JUNCTION FET P-CH TO-18

Specifications

Brand
Central Semiconductor Corp
Package
TO-206AA, TO-18-3 Metal Can
Packaging
—
Weight
—

Total Inventory

272pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N2608_1 from Central Semiconductor Corp fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerCentral Semiconductor Corp
Series-
FET TypeP-Channel
Voltage - Breakdown (V(BR)GSS)30V
Drain to Source Voltage (Vdss)-
Current - Drain (Idss) @ Vds (Vgs=0)900µA @ 5V
Current Drain (Id) - Max-
Voltage - Cutoff (VGS off) @ Id1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds-
Resistance - RDS(On)-
Power - Max300mW
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-206AA, TO-18-3 Metal Can
Supplier Device PackageTO-18

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Datasheet & Documents

pn4302_105.pdf

PDF Document · 3 pages

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