Heisener Electronics
BOM

2N2222AE3_1

50V|800mA|500mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

SMALL-SIGNAL BJT

Specifications

Brand
Microsemi
Package
TO-206AA, TO-18-3 Metal Can
Packaging
—
Weight
—

Total Inventory

468pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N2222AE3_1 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)800mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Power - Max500mW
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-206AA, TO-18-3 Metal Can
Supplier Device PackageTO-18

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