Heisener Electronics
BOM

2N1131L

40 V|600 mA|600 mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

POWER BJT

Specifications

Brand
Microchip Technology
Package
TO-205AA, TO-5-3 Metal Can
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 2N1131L from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrochip Technology
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Vce Saturation (Max) @ Ib, Ic1.3V @ 15mA, 150mA
Current - Collector Cutoff (Max)10mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 150mA, 10V
Power - Max600 mW
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Supplier Device PackageTO-5AA

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