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SMALL SIGNAL SCHOTTKY BARRIER DI
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- -
- Packaging
- —
- Weight
- —
Total Inventory
271pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 1SS406-H3F from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | * | |
| Diode Type | - | |
| Voltage - DC Reverse (Vr) (Max) | - | |
| Current - Average Rectified (Io) | - | |
| Voltage - Forward (Vf) (Max) @ If | - | |
| Speed | - | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | - | |
| Capacitance @ Vr, F | - | |
| Mounting Type | - | |
| Package / Case | - | |
| Supplier Device Package | - | |
| Operating Temperature - Junction | - |
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