Heisener Electronics
BOM

1N8034-GA

650V|9.4A (DC)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE SCHOTTKY 650V 9.4A TO257

Specifications

Brand
GeneSiC Semiconductor
Package
TO-257-3
Packaging
—
Weight
—

Total Inventory

438pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 1N8034-GA from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerGeneSiC Semiconductor
Series-
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)650V
Current - Average Rectified (Io)9.4A (DC)
Voltage - Forward (Vf) (Max) @ If1.34V @ 10A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0ns
Current - Reverse Leakage @ Vr5µA @ 650V
Capacitance @ Vr, F1107pF @ 1V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-257-3
Supplier Device PackageTO-257
Operating Temperature - Junction-55°C ~ 250°C

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Datasheet & Documents

1n8034-ga.pdf

PDF Document · 5 pages

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