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1200V|8A (DC)
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DIODE SILICON 1.2KV 8A TO257
Specifications
- Brand
- GeneSiC Semiconductor
- Package
- TO-257-3
- Packaging
- —
- Weight
- —
Total Inventory
287pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 1N8026-GA from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | GeneSiC Semiconductor | |
| Series | - | |
| Diode Type | Silicon Carbide Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 1200V | |
| Current - Average Rectified (Io) | 8A (DC) | |
| Voltage - Forward (Vf) (Max) @ If | 1.6V @ 2.5A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0ns | |
| Current - Reverse Leakage @ Vr | 10µA @ 1200V | |
| Capacitance @ Vr, F | 237pF @ 1V, 1MHz | |
| Mounting Type | Through Hole | |
| Package / Case | TO-257-3 | |
| Supplier Device Package | TO-257 | |
| Operating Temperature - Junction | -55°C ~ 250°C |
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Datasheet & Documents
1n8026-ga.pdf
PDF Document · 5 pages
