Heisener Electronics
BOM

1N6779

600 V|15A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 600V 15A TO257

Specifications

Brand
Microchip Technology
Package
TO-257-3
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 1N6779 from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrochip Technology
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600 V
Current - Average Rectified (Io)15A
Voltage - Forward (Vf) (Max) @ If1.6 V @ 15 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)60 ns
Current - Reverse Leakage @ Vr10 µA @ 480 V
Capacitance @ Vr, F300pF @ 5V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-257-3
Supplier Device PackageTO-257
Operating Temperature - Junction150°C (Max)

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