Heisener Electronics
BOM

1N6665R

150 V|10A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 150V 10A TO257

Specifications

Brand
Microchip Technology
Package
TO-257-3
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 1N6665R from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrochip Technology
Series-
Diode TypeStandard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)150 V
Current - Average Rectified (Io)10A
Voltage - Forward (Vf) (Max) @ If1 V @ 6 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
Current - Reverse Leakage @ Vr250 nA @ 150 V
Capacitance @ Vr, F-
Mounting TypeThrough Hole
Package / CaseTO-257-3
Supplier Device PackageTO-257
Operating Temperature - Junction200°C

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