Heisener Electronics
BOM

1N6663US

600V|500mA (DC)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 600V 500MA D5A

Specifications

Brand
Microsemi
Package
SQ-MELF, A
Packaging
—
Weight
—

Total Inventory

505pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 1N6663US from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)500mA (DC)
Voltage - Forward (Vf) (Max) @ If1V @ 400mA
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr50nA @ 600V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseSQ-MELF, A
Supplier Device PackageD-5A
Operating Temperature - Junction-65°C ~ 175°C

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