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660V|1.2A
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DIODE GEN PURP 660V 1.2A A-MELF
Specifications
- Brand
- Microsemi
- Package
- SQ-MELF, A
- Packaging
- —
- Weight
- —
Total Inventory
354pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 1N6622US from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 660V | |
| Current - Average Rectified (Io) | 1.2A | |
| Voltage - Forward (Vf) (Max) @ If | 1.4V @ 1.2A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 30ns | |
| Current - Reverse Leakage @ Vr | 500nA @ 660V | |
| Capacitance @ Vr, F | 10pF @ 10V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | SQ-MELF, A | |
| Supplier Device Package | A-MELF | |
| Operating Temperature - Junction | -65°C ~ 150°C |
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