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100V|2A
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DIODE GEN PURP 100V 2A G-MELF
Specifications
- Brand
- Microsemi
- Package
- SQ-MELF, G
- Packaging
- —
- Weight
- —
Total Inventory
144pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 1N6080US from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Current - Average Rectified (Io) | 2A | |
| Voltage - Forward (Vf) (Max) @ If | 1.5V @ 37.7A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 30ns | |
| Current - Reverse Leakage @ Vr | 10µA @ 100V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Surface Mount | |
| Package / Case | SQ-MELF, G | |
| Supplier Device Package | G-MELF (D-5C) | |
| Operating Temperature - Junction | -65°C ~ 155°C |
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Datasheet & Documents
1n6080us.pdf
PDF Document · 3 pages
