Heisener Electronics
BOM

1N5809-TR

100V|3A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

UFR,FRR

Specifications

Brand
Microsemi
Package
B, Axial
Packaging
—
Weight
—

Total Inventory

364pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 1N5809-TR from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If875mV @ 4A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30ns
Current - Reverse Leakage @ Vr5µA @ 100V
Capacitance @ Vr, F60pF @ 10V, 1MHz
Mounting TypeThrough Hole
Package / CaseB, Axial
Supplier Device PackageB, Axial
Operating Temperature - Junction-65°C ~ 175°C

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