Heisener Electronics
BOM

1N5807US

50V|3A
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DIODE GEN PURP 50V 3A B-MELF

Specifications

Brand
Microsemi
Package
SQ-MELF, B
Packaging
—
Weight
—

Total Inventory

291pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 1N5807US from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrosemi Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)50V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If875mV @ 4A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30ns
Current - Reverse Leakage @ Vr5µA @ 50V
Capacitance @ Vr, F60pF @ 10V, 1MHz
Mounting TypeSurface Mount
Package / CaseSQ-MELF, B
Supplier Device PackageB, SQ-MELF
Operating Temperature - Junction-65°C ~ 175°C

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