Heisener Electronics
BOM

1N5618US

600V|1A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 600V 1A D5A

Specifications

Brand
Microsemi
Package
SQ-MELF, A
Packaging
—
Weight
—

Total Inventory

810pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 1N5618US from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.3V @ 3A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)2µs
Current - Reverse Leakage @ Vr500nA @ 600V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseSQ-MELF, A
Supplier Device PackageD-5A
Operating Temperature - Junction-65°C ~ 200°C

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