Heisener Electronics
BOM

1N5553_1B3

800V|3A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 800V 3A AXIAL

Specifications

Brand
Microsemi
Package
B, Axial
Packaging
—
Weight
—

Total Inventory

386pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 1N5553_1B3 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)800V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If1.2V @ 9A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)2µs
Current - Reverse Leakage @ Vr1µA @ 800V
Capacitance @ Vr, F-
Mounting TypeThrough Hole
Package / CaseB, Axial
Supplier Device Package-
Operating Temperature - Junction-65°C ~ 175°C

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