Heisener Electronics
BOM

1N5417US

200V|3A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 200V 3A D5B

Specifications

Brand
Microsemi
Package
E-MELF
Packaging
—
Weight
—

Total Inventory

493pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 1N5417US from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If1.5V @ 9A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)150ns
Current - Reverse Leakage @ Vr1µA @ 200V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseE-MELF
Supplier Device PackageD-5B
Operating Temperature - Junction-65°C ~ 175°C

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