Heisener Electronics
BOM

1N5186US

100V|3A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 100V 3A AXIAL

Specifications

Brand
Microsemi
Package
B, Axial
Packaging
—
Weight
—

Total Inventory

347pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 1N5186US from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If1.5V @ 9A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)150ns
Current - Reverse Leakage @ Vr2µA @ 100V
Capacitance @ Vr, F-
Mounting TypeThrough Hole
Package / CaseB, Axial
Supplier Device Package-
Operating Temperature - Junction-65°C ~ 175°C

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