Heisener Electronics
BOM

1N4248US

800 V|1A
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DIODE GEN PURP 800V 1A MELF-1

Specifications

Brand
Microchip Technology
Package
SQ-MELF
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 1N4248US from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrochip Technology
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)800 V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.3 V @ 3 A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)5 µs
Current - Reverse Leakage @ Vr1 µA @ 800 V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseSQ-MELF
Supplier Device PackageMELF-1
Operating Temperature - Junction-65°C ~ 175°C

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