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1000V|35A
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DIODE GEN PURP 1KV 35A DO5
Specifications
- Brand
- GeneSiC Semiconductor
- Package
- DO-203AB, DO-5, Stud
- Packaging
- —
- Weight
- —
Total Inventory
454pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 1N3768 from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | GeneSiC Semiconductor | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1000V | |
| Current - Average Rectified (Io) | 35A | |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 35A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 10µA @ 50V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Chassis, Stud Mount | |
| Package / Case | DO-203AB, DO-5, Stud | |
| Supplier Device Package | DO-5 | |
| Operating Temperature - Junction | -65°C ~ 190°C |
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Datasheet & Documents
1n3767r.pdf
PDF Document · 3 pages
