Heisener Electronics
BOM

1N3660R

100 V|35A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP REV 100V 35A DO21

Specifications

Brand
Microchip Technology
Package
DO-208AA
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 1N3660R from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrochip Technology
Series-
Diode TypeStandard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)100 V
Current - Average Rectified (Io)35A
Voltage - Forward (Vf) (Max) @ If1.1 V @ 35 A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10 µA @ 100 V
Capacitance @ Vr, F-
Mounting TypePress Fit
Package / CaseDO-208AA
Supplier Device PackageDO-21
Operating Temperature - Junction-65°C ~ 175°C

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