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500V|31A|1140W
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MOSFET 4N-CH 500V 31A MTP
Specifications
- Brand
- Vishay Semiconductor Diodes Division
- Package
- 16-MTP Module
- Packaging
- —
- Weight
- —
Total Inventory
454pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 19MT050XF from Vishay Semiconductor Diodes Division fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Semiconductor Diodes Division | |
| Series | HEXFET® | |
| FET Type | 4 N-Channel (H-Bridge) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 500V | |
| Current - Continuous Drain (Id) @ 25°C | 31A | |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 19A, 10V | |
| Vgs(th) (Max) @ Id | 6V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 7210pF @ 25V | |
| Power - Max | 1140W | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | 16-MTP Module | |
| Supplier Device Package | 16-MTP |
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Datasheet & Documents
19mt050xf.pdf
PDF Document · 10 pages
